DHG60U1200LB tentative i = a v = v low loss and soft recovery high performance fast recovery diode 3~ rectifier bridge sonic fast recovery diode _ ~ + ~ ~ part number DHG60U1200LB backside: isolated dav rr tns 200 rrm 62 1200 = features / advantages: applications: package: housing: _ dcb isolated backside _ isolation voltage 3000 v _ epoxy meets ul 94v-0 _ rohs compliant planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) isoplus-smpd ixys reserves the right to change limits, conditions and dimensions. 20110722 data according to iec 60747and per diode unless otherwise specified ? 2011 ixys all rights reserved http://www..net/ datasheet pdf - http://www..net/
DHG60U1200LB tentative v = v symbol definition ratings typ. max. i r v i a v f 2.30 r 1.10 k/w r/d min. 62 v rsm v 50 t = 25c vj t = c vj m a 0.5 v = v r/d t = 25c vj i = a t v t = c c 80 p tot 110 w t = 25c c r k/w 30 1200 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions unit 3.00 t = 25c vj 125 v f0 v 1.25 t = c vj 150 r f 30 m ? threshold voltage slope resistance for power loss calculation only a 125 v rrm v 1200 max. repetitive reverse blocking voltage t = 25c vj c j 13 j unction capacitance v = v 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = c vj 45 max. forward surge current v = 0 v r t = c vj 150 1200 dav d = rectangular 0.5 bridge output current thermal resistance junction to case thjc thermal resistance case to heatsink thch fast diode 0.4 n s 23 a t vj =c reverse recovery time a 30 200 350 n s i rm max. reverse recovery current i f =a; 30 25 t = 125 c vj -di f =a/s 600 /dt t rr v r =v 600 t vj =c 25 t = 125 c vj ixys reserves the right to change limits, conditions and dimensions. 20110722 data according to iec 60747and per diode unless otherwise specified ? 2011 ixys all rights reserved http://www..net/ datasheet pdf - http://www..net/
DHG60U1200LB tentative ratings xxxxxxxxxx yywwa part number date code backside dcb pin 1 identifier u l logo data matrix code digits 1 to 19: part # 20 to 23: date code 24 to 25: assembly line 26 to 31: lot # 32: split lot 33 to 36: individual # ~ ~ ~ assembly line d h g 60 u 1200 lb part number diode sonic fast recovery diode extreme fast 3~ rectifier bridge smpd = = = current rating [a] reverse voltage [v] = = = = package t vj c t stg c 150 storage temperature -55 weight g 8.5 symbol definition typ. max. min. conditions virtual junction temperature unit f c n 130 mounting force with clip 40 v isol v 3000 t = 1 second v 2500 t = 1 minute isolation voltage mm mm 1.6 4.0 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 100 a per terminal 150 -55 terminal to terminal isoplus-smpd DHG60U1200LB DHG60U1200LB delivery mode quantity code no. part number marking on product standard ordering threshold voltage v 1.25 m ? v 0 max r 0 max slope resistance equivalent circuits for simulation t = 150c vj i v 0 r 0 fast diode ixys reserves the right to change limits, conditions and dimensions. 20110722 data according to iec 60747and per diode unless otherwise specified ? 2011 ixys all rights reserved http://www..net/ datasheet pdf - http://www..net/
DHG60U1200LB tentative notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) dcb area 10 to 50 m convex; position of dcb area in relation to plastic rim: 25 m (measured 2 mm from cu rim) 4) terminal plating: 0.2 - 1 m ni + 10 - 25 m sn (gal v.) cutting edges may be partially free of plating (6x) 1 0,05 2) 5,5 0,1 0,5 0,1 25 0,2 1) 18 0,1 9 0,1 (3x) 2 0,05 2) 23 0,2 32,7 0,5 2,75 0,1 5,5 0,1 13,5 0,1 16,25 0,1 19 0,1 a c 4 0,05 0 , 5 5 0 , 1 2 0,2 4,85 0,2 3) 0,05 c a (8 : 1) 0 +0,15 2 0,1 seating plane _ ~ + ~ ~ outlines isoplus-smpd ixys reserves the right to change limits, conditions and dimensions. 20110722 data according to iec 60747and per diode unless otherwise specified ? 2011 ixys all rights reserved http://www..net/ datasheet pdf - http://www..net/
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